RF power potential of 45 nm CMOS technology

RF power potential of 45 nm CMOS technology

This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with a peak power-added efficiency (PAE) of 70% at 1.1 V. The PAE and P[subscript o...

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Bibliographic Details
Main Authors:	Gogineni, Usha, del Alamo, Jesus A., Putnam, Christopher
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	en_US
Published:	Institute of Electrical and Electronics Engineers 2010
Online Access:	http://hdl.handle.net/1721.1/59846

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