Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate E-mode devices. For example, gate recess can be applied to conventional AlGaN/...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59973 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| _version_ | 1811082180935286784 |
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| author | Palacios, Tomas Lu, Bin Saadat, Omair Irfan Piner, Edwin L. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Lu, Bin Saadat, Omair Irfan Piner, Edwin L. |
| author_sort | Palacios, Tomas |
| collection | MIT |
| description | Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate E-mode devices. For example, gate recess can be applied to conventional AlGaN/GaN HEMTs to achieve E-mode operation. However, these devices have very low threshold voltage and large gate leakage. Alternatively, the use of CF[subscript 4] plasma treatment in the gate region prior to gate metallization resuIts in E-mode AlGaN/GaN HEMTs with higher threshold voltage. In this paper, we demonstrate E-mode AlGaN/GaN HEMTs by hydrogen plasma treatment. The results are compared to the F-treated HEMTs an d depletion-mode (D-mode) HEMTs and important differences have been found in the linearity of these transistors. |
| first_indexed | 2024-09-23T11:58:52Z |
| format | Article |
| id | mit-1721.1/59973 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:58:52Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/599732022-10-01T07:23:54Z Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment Palacios, Tomas Lu, Bin Saadat, Omair Irfan Piner, Edwin L. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Palacios, Tomas Lu, Bin Saadat, Omair Irfan Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate E-mode devices. For example, gate recess can be applied to conventional AlGaN/GaN HEMTs to achieve E-mode operation. However, these devices have very low threshold voltage and large gate leakage. Alternatively, the use of CF[subscript 4] plasma treatment in the gate region prior to gate metallization resuIts in E-mode AlGaN/GaN HEMTs with higher threshold voltage. In this paper, we demonstrate E-mode AlGaN/GaN HEMTs by hydrogen plasma treatment. The results are compared to the F-treated HEMTs an d depletion-mode (D-mode) HEMTs and important differences have been found in the linearity of these transistors. United States. Office of Naval Research (MINE MURI) Deshpande Center for Technological Innovation 2010-11-12T18:50:37Z 2010-11-12T18:50:37Z 2009-12 2009-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-3528-9 INSPEC Accession Number: 11010471 http://hdl.handle.net/1721.1/59973 Bin Lu et al. “Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment.” Device Research Conference, 2009. DRC 2009. 2009. 59-60. ©2009 IEEE. https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 en_US http://dx.doi.org/10.1109/DRC.2009.5354885 Device Research Conference, 2009. DRC 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Palacios, Tomas Lu, Bin Saadat, Omair Irfan Piner, Edwin L. Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment |
| title | Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment |
| title_full | Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment |
| title_fullStr | Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment |
| title_full_unstemmed | Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment |
| title_short | Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment |
| title_sort | enhancement mode algan gan hemts with high linearity fabricated by hydrogen plasma treatment |
| url | http://hdl.handle.net/1721.1/59973 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
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