Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate E-mode devices. For example, gate recess can be applied to conventional AlGaN/...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59973 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |