Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits
For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. We present a near-room-temperature, fully lithographic process to fabricate integrated pentacene dual V [subscript T] OTFTs suitable for la...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/60019 https://orcid.org/0000-0003-3001-9223 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0002-0413-8774 |
| _version_ | 1826215469885947904 |
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| author | Sodini, Charles G. Nausieda, Ivan A. Ryu, Kevin K. He, David Da Akinwande, Akintunde Ibitayo Bulovic, Vladimir |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Sodini, Charles G. Nausieda, Ivan A. Ryu, Kevin K. He, David Da Akinwande, Akintunde Ibitayo Bulovic, Vladimir |
| author_sort | Sodini, Charles G. |
| collection | MIT |
| description | For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. We present a near-room-temperature, fully lithographic process to fabricate integrated pentacene dual V [subscript T] OTFTs suitable for large-area and flexible mixed signal circuits. Platinum and aluminum are used as the gate metals for the high V [subscript T] (more depletion-like) and low V [subscript T] (more enhancement-like) p-channel devices, respectively. The availability of a high V [subscript T] device enables area-efficient zero-VGS current source loads. We demonstrate positive noise margin inverters which use pico Watts of power and a 3 V supply. Compared to a single V [subscript T] implementation, the dual V [subscript T] inverter occupies an area that is 30Ã Â smaller, and is 17Ã Â faster. These results show that p-channel only organic technologies can produce functional and low-power circuits without integrating a complementary device. |
| first_indexed | 2024-09-23T16:30:45Z |
| format | Article |
| id | mit-1721.1/60019 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:30:45Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/600192022-09-29T20:01:16Z Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits Sodini, Charles G. Nausieda, Ivan A. Ryu, Kevin K. He, David Da Akinwande, Akintunde Ibitayo Bulovic, Vladimir Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Sodini, Charles G. Sodini, Charles G. Nausieda, Ivan A. Ryu, Kevin K. He, David Da Akinwande, Akintunde Ibitayo Bulovic, Vladimir For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. We present a near-room-temperature, fully lithographic process to fabricate integrated pentacene dual V [subscript T] OTFTs suitable for large-area and flexible mixed signal circuits. Platinum and aluminum are used as the gate metals for the high V [subscript T] (more depletion-like) and low V [subscript T] (more enhancement-like) p-channel devices, respectively. The availability of a high V [subscript T] device enables area-efficient zero-VGS current source loads. We demonstrate positive noise margin inverters which use pico Watts of power and a 3 V supply. Compared to a single V [subscript T] implementation, the dual V [subscript T] inverter occupies an area that is 30Ã Â smaller, and is 17Ã Â faster. These results show that p-channel only organic technologies can produce functional and low-power circuits without integrating a complementary device. Semiconductor Research Corporation. Center for Circuits and Systems Solutions (Contract 2003-CT-888) Martin Family Society of Fellows for Sustainability 2010-11-21T21:48:50Z 2010-11-21T21:48:50Z 2009-12 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-5639-0 E-ISBN: 978-1-4244-5640-6 INSPEC Accession Number: 11207408 http://hdl.handle.net/1721.1/60019 Nausieda, I. et al. “Dual threshold voltage integrated organic technology for ultralow-power circuits.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. © 2009, IEEE https://orcid.org/0000-0003-3001-9223 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0002-0413-8774 en_US http://dx.doi.org/10.1109/IEDM.2009.5424345 IEEE International Electron Devices Meeting Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Sodini, Charles G. Nausieda, Ivan A. Ryu, Kevin K. He, David Da Akinwande, Akintunde Ibitayo Bulovic, Vladimir Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits |
| title | Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits |
| title_full | Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits |
| title_fullStr | Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits |
| title_full_unstemmed | Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits |
| title_short | Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits |
| title_sort | dual threshold voltage integrated organic technology for ultralow power circuits |
| url | http://hdl.handle.net/1721.1/60019 https://orcid.org/0000-0003-3001-9223 https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0002-0413-8774 |
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