1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/60058 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1826202696777990144 |
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| author | Yoon, Soon Fatt Chen, Kah Pin Ng, Tien Khee Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lew, Kim Luong Pitera, Arthur J. Ringel, Steve A. Carlin, Andrew M. Gonzalez, Maria Fitzgerald, Eugene A |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Yoon, Soon Fatt Chen, Kah Pin Ng, Tien Khee Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lew, Kim Luong Pitera, Arthur J. Ringel, Steve A. Carlin, Andrew M. Gonzalez, Maria Fitzgerald, Eugene A |
| author_sort | Yoon, Soon Fatt |
| collection | MIT |
| description | The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth. |
| first_indexed | 2024-09-23T12:14:56Z |
| format | Article |
| id | mit-1721.1/60058 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:14:56Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/600582022-09-28T00:49:13Z 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge 1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge Yoon, Soon Fatt Chen, Kah Pin Ng, Tien Khee Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lew, Kim Luong Pitera, Arthur J. Ringel, Steve A. Carlin, Andrew M. Gonzalez, Maria Fitzgerald, Eugene A Massachusetts Institute of Technology. Department of Materials Science and Engineering Singapore-MIT Alliance in Research and Technology (SMART) Fitzgerald, Eugene A. Yoon, Soon Fatt Chen, Kah Pin Pitera, Arthur J. Fitzgerald, Eugene A. The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth. Singapore. National Research Foundation Singapore. Economic Development Board (project ID NRF2007EWT-CERP01-0206) 2010-12-02T17:53:33Z 2010-12-02T17:53:33Z 2010-02 2009-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-2949-3 0160-8371 INSPEC Accession Number: 11152112 http://hdl.handle.net/1721.1/60058 Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE. https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1109/PVSC.2009.5411736 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Yoon, Soon Fatt Chen, Kah Pin Ng, Tien Khee Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lew, Kim Luong Pitera, Arthur J. Ringel, Steve A. Carlin, Andrew M. Gonzalez, Maria Fitzgerald, Eugene A 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge |
| title | 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge |
| title_full | 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge |
| title_fullStr | 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge |
| title_full_unstemmed | 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge |
| title_short | 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge |
| title_sort | 1ev gan subscript x as subscript 1 x y sb subscript y material for lattice matched iii v solar cell implementation on gaas and ge |
| url | http://hdl.handle.net/1721.1/60058 https://orcid.org/0000-0002-1891-1959 |
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