1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as...
Main Authors: | Yoon, Soon Fatt, Chen, Kah Pin, Ng, Tien Khee, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Lew, Kim Luong, Pitera, Arthur J., Ringel, Steve A., Carlin, Andrew M., Gonzalez, Maria, Fitzgerald, Eugene A |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers
2010
|
Online Access: | http://hdl.handle.net/1721.1/60058 https://orcid.org/0000-0002-1891-1959 |
Similar Items
-
Magneto-optical studies in In[subscript 1-x]Ga[subscript x]As[subscript y]P[subscript 1-y] semiconducting alloys
by: Alavi, Kambiz.
Published: (2024) -
Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces
by: Sharma, Prithu, et al.
Published: (2014) -
New insight into the material parameter B to understand the enhanced thermoelectric performance of Mg[subscript 2]S[subscript n1−x−y]Ge[subscript x]Sb[subscript y]
by: Liu, Weishu, et al.
Published: (2017) -
Anomalous Interface and Surface Strontium Segregation in (La[subscript 1-y]Sr[subscript y])[subscript 2]CoO[subscript 4±δ]/La[subscript 1-x]Sr[subscript x]CoO[subscript 3-δ] Heterostructured Thin Films
by: Feng, Zhenxing, et al.
Published: (2015) -
Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium
by: Cole, Garrett D., et al.
Published: (2013)