1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as...

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Bibliographic Details
Main Authors:	Yoon, Soon Fatt, Chen, Kah Pin, Ng, Tien Khee, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Lew, Kim Luong, Pitera, Arthur J., Ringel, Steve A., Carlin, Andrew M., Gonzalez, Maria, Fitzgerald, Eugene A
Other Authors:	Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format:	Article
Language:	en_US
Published:	Institute of Electrical and Electronics Engineers 2010
Online Access:	http://hdl.handle.net/1721.1/60058 https://orcid.org/0000-0002-1891-1959

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