Low-voltage spatial-phase-locked scanning-electron-beam lithography
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2010
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| Online Access: | http://hdl.handle.net/1721.1/60159 |
| _version_ | 1826212979070205952 |
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| author | Cheong, Lin Lee |
| author2 | Henry I. Smith. |
| author_facet | Henry I. Smith. Cheong, Lin Lee |
| author_sort | Cheong, Lin Lee |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010. |
| first_indexed | 2024-09-23T15:41:12Z |
| format | Thesis |
| id | mit-1721.1/60159 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T15:41:12Z |
| publishDate | 2010 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/601592019-04-11T02:46:40Z Low-voltage spatial-phase-locked scanning-electron-beam lithography Cheong, Lin Lee Henry I. Smith. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010. Includes bibliographical references (p. 63-64). Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, the feasibility of spatial-phase-locked lowvoltage electron-beam lithography is investigated. First, the feasibility of low-voltage electron-beam lithography (LVEBL) is experimentally verified using the resists hydrogen silsesquioxane (HSQ) and polymethyl methacrylate (PMMA). Unlike electronbeam lithography at higher voltages, LVEBL has minimal proximity effects and is not resolution-limited by these effects. The fabrication of ultra-thin photoresist grids is investigated and the secondary electron signal levels of these grids are measured. by Lin Lee Cheong. S.M. 2010-12-06T17:31:28Z 2010-12-06T17:31:28Z 2010 2010 Thesis http://hdl.handle.net/1721.1/60159 681751108 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 64 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Cheong, Lin Lee Low-voltage spatial-phase-locked scanning-electron-beam lithography |
| title | Low-voltage spatial-phase-locked scanning-electron-beam lithography |
| title_full | Low-voltage spatial-phase-locked scanning-electron-beam lithography |
| title_fullStr | Low-voltage spatial-phase-locked scanning-electron-beam lithography |
| title_full_unstemmed | Low-voltage spatial-phase-locked scanning-electron-beam lithography |
| title_short | Low-voltage spatial-phase-locked scanning-electron-beam lithography |
| title_sort | low voltage spatial phase locked scanning electron beam lithography |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/60159 |
| work_keys_str_mv | AT cheonglinlee lowvoltagespatialphaselockedscanningelectronbeamlithography |