Very-High-Frequency Resonant Boost Converters

This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built an...

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Main Authors: Perreault, David J., Pilawa-Podgurski, Robert C. N., Rivas, Juan M., Sagneri, Anthony D., Anderson, David I.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/60235
https://orcid.org/0000-0002-0746-6191
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author Perreault, David J.
Pilawa-Podgurski, Robert C. N.
Rivas, Juan M.
Sagneri, Anthony D.
Anderson, David I.
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Perreault, David J.
Pilawa-Podgurski, Robert C. N.
Rivas, Juan M.
Sagneri, Anthony D.
Anderson, David I.
author_sort Perreault, David J.
collection MIT
description This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a high-performance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high-bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration.
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spelling mit-1721.1/602352022-09-28T11:33:47Z Very-High-Frequency Resonant Boost Converters Perreault, David J. Pilawa-Podgurski, Robert C. N. Rivas, Juan M. Sagneri, Anthony D. Anderson, David I. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems Perreault, David J. Perreault, David J. Pilawa-Podgurski, Robert C. N. Sagneri, Anthony D. This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a high-performance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high-bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration. 2010-12-08T19:26:53Z 2010-12-08T19:26:53Z 2009-06 2009-06 Article http://purl.org/eprint/type/JournalArticle 1654 - 1665 INSPEC Accession Number: 10756704 http://hdl.handle.net/1721.1/60235 Pilawa-Podgurski, R. et al. “Very-High-Frequency Resonant Boost Converters.” Power Electronics, IEEE Transactions on 24.6 (2009): 1654-1665. ©2009 IEEE. https://orcid.org/0000-0002-0746-6191 en_US http://dx.doi.org/10.1109/tpel.2009.2016098 IEEE Transactions on Power Electronics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE
spellingShingle Perreault, David J.
Pilawa-Podgurski, Robert C. N.
Rivas, Juan M.
Sagneri, Anthony D.
Anderson, David I.
Very-High-Frequency Resonant Boost Converters
title Very-High-Frequency Resonant Boost Converters
title_full Very-High-Frequency Resonant Boost Converters
title_fullStr Very-High-Frequency Resonant Boost Converters
title_full_unstemmed Very-High-Frequency Resonant Boost Converters
title_short Very-High-Frequency Resonant Boost Converters
title_sort very high frequency resonant boost converters
url http://hdl.handle.net/1721.1/60235
https://orcid.org/0000-0002-0746-6191
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