Experimental analysis of two measurement techniques to characterize photodiode linearity
As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) subs...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/60287 |
| _version_ | 1811096205020626944 |
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| author | Ramaswamy, Anand Nunoya, Nobuhiro Piels, Molly Johansson, Leif A. Coldren, Larry A. Bowers, John E. Hastings, Alexander S. Williams, Keith J. Klamkin, Jonathan |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Ramaswamy, Anand Nunoya, Nobuhiro Piels, Molly Johansson, Leif A. Coldren, Larry A. Bowers, John E. Hastings, Alexander S. Williams, Keith J. Klamkin, Jonathan |
| author_sort | Ramaswamy, Anand |
| collection | MIT |
| description | As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes. |
| first_indexed | 2024-09-23T16:40:15Z |
| format | Article |
| id | mit-1721.1/60287 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:40:15Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/602872022-10-03T07:29:11Z Experimental analysis of two measurement techniques to characterize photodiode linearity Ramaswamy, Anand Nunoya, Nobuhiro Piels, Molly Johansson, Leif A. Coldren, Larry A. Bowers, John E. Hastings, Alexander S. Williams, Keith J. Klamkin, Jonathan Lincoln Laboratory Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Klamkin, Jonathan Klamkin, Jonathan As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes. United States. Defense Advanced Research Projects Agency (PHORFRONT program under United States Air Force contract number FA8750-05- C-0265) 2010-12-14T17:17:43Z 2010-12-14T17:17:43Z 2009-12 2009-10 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-4788-6 INSPEC Accession Number: 10999470 http://hdl.handle.net/1721.1/60287 Ramaswamy, A. et al. “Experimental analysis of two measurement techniques to characterize photodiode linearity.” Microwave Photonics, 2009. MWP '09. International Topical Meeting on. 2009. 1-4. ©2009 IEEE. en_US International Topical Meeting on Microwave Photonics, 2009. MWP '09 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Ramaswamy, Anand Nunoya, Nobuhiro Piels, Molly Johansson, Leif A. Coldren, Larry A. Bowers, John E. Hastings, Alexander S. Williams, Keith J. Klamkin, Jonathan Experimental analysis of two measurement techniques to characterize photodiode linearity |
| title | Experimental analysis of two measurement techniques to characterize photodiode linearity |
| title_full | Experimental analysis of two measurement techniques to characterize photodiode linearity |
| title_fullStr | Experimental analysis of two measurement techniques to characterize photodiode linearity |
| title_full_unstemmed | Experimental analysis of two measurement techniques to characterize photodiode linearity |
| title_short | Experimental analysis of two measurement techniques to characterize photodiode linearity |
| title_sort | experimental analysis of two measurement techniques to characterize photodiode linearity |
| url | http://hdl.handle.net/1721.1/60287 |
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