Coherently coupled exciton lasing

Lowest reported threshold organic semiconductor VCSEL (4.9 muJ/cm[superscript 2]) is achieved when excitons coherently couple, upon sub-picosecond non-resonant optical excitation. Temperature dependence of lambda/2 n device, absent in ges lambda/n cavities, indicates excitons undergo condensate-like...

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Main Authors: Bulovic, Vladimir, Tischler, Jonathan R., Young, Elizabeth Renee, Nocera, Daniel G.
Other Authors: Massachusetts Institute of Technology. Department of Chemistry
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/60342
https://orcid.org/0000-0002-0960-2580
https://orcid.org/0000-0002-4507-1115
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author Bulovic, Vladimir
Tischler, Jonathan R.
Young, Elizabeth Renee
Nocera, Daniel G.
author2 Massachusetts Institute of Technology. Department of Chemistry
author_facet Massachusetts Institute of Technology. Department of Chemistry
Bulovic, Vladimir
Tischler, Jonathan R.
Young, Elizabeth Renee
Nocera, Daniel G.
author_sort Bulovic, Vladimir
collection MIT
description Lowest reported threshold organic semiconductor VCSEL (4.9 muJ/cm[superscript 2]) is achieved when excitons coherently couple, upon sub-picosecond non-resonant optical excitation. Temperature dependence of lambda/2 n device, absent in ges lambda/n cavities, indicates excitons undergo condensate-like phase transition.
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spelling mit-1721.1/603422022-09-28T09:27:44Z Coherently coupled exciton lasing Bulovic, Vladimir Tischler, Jonathan R. Young, Elizabeth Renee Nocera, Daniel G. Massachusetts Institute of Technology. Department of Chemistry Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Research Laboratory of Electronics Bulovic, Vladimir Bulovic, Vladimir Tischler, Jonathan R. Young, Elizabeth Renee Nocera, Daniel G. Lowest reported threshold organic semiconductor VCSEL (4.9 muJ/cm[superscript 2]) is achieved when excitons coherently couple, upon sub-picosecond non-resonant optical excitation. Temperature dependence of lambda/2 n device, absent in ges lambda/n cavities, indicates excitons undergo condensate-like phase transition. 2010-12-21T20:04:05Z 2010-12-21T20:04:05Z 2009-08 2009-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-55752-869-8 INSPEC Accession Number: 10843339 http://hdl.handle.net/1721.1/60342 Tischler, J.R. et al. “Coherently coupled exciton lasing.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2. © 2009 IEEE. https://orcid.org/0000-0002-0960-2580 https://orcid.org/0000-0002-4507-1115 en_US http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5226006 Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum Electronics and Laser Science Conference. CLEO/QELS 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE
spellingShingle Bulovic, Vladimir
Tischler, Jonathan R.
Young, Elizabeth Renee
Nocera, Daniel G.
Coherently coupled exciton lasing
title Coherently coupled exciton lasing
title_full Coherently coupled exciton lasing
title_fullStr Coherently coupled exciton lasing
title_full_unstemmed Coherently coupled exciton lasing
title_short Coherently coupled exciton lasing
title_sort coherently coupled exciton lasing
url http://hdl.handle.net/1721.1/60342
https://orcid.org/0000-0002-0960-2580
https://orcid.org/0000-0002-4507-1115
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