Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap
We demonstrate quantum control techniques for a single trapped ion in a cryogenic, surface-electrode trap. A narrow optical transition of Sr[superscript +] along with the ground and first excited motional states of the harmonic trapping potential form a two-qubit system. The optical qubit transition...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Physical Society
2010
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| Online Access: | http://hdl.handle.net/1721.1/60354 https://orcid.org/0000-0001-7296-523X |
| _version_ | 1826210487399874560 |
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| author | Chuang, Isaac L. Wang, Shannon Xuanyue Labaziewicz, Jaroslaw Ge, Yufei Shewmon, Ruth |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Chuang, Isaac L. Wang, Shannon Xuanyue Labaziewicz, Jaroslaw Ge, Yufei Shewmon, Ruth |
| author_sort | Chuang, Isaac L. |
| collection | MIT |
| description | We demonstrate quantum control techniques for a single trapped ion in a cryogenic, surface-electrode trap. A narrow optical transition of Sr[superscript +] along with the ground and first excited motional states of the harmonic trapping potential form a two-qubit system. The optical qubit transition is susceptible to magnetic field fluctuations, which we stabilize with a simple and compact method using superconducting rings. Decoherence of the motional qubit is suppressed by the cryogenic environment. ac Stark shift correction is accomplished by controlling the laser phase in the pulse sequencer, eliminating the need for an additional laser. Quantum process tomography is implemented on atomic and motional states by use of conditional pulse sequences. With these techniques, we demonstrate a Cirac-Zoller controlled-not gate in a single ion with a mean fidelity of 91(1)%. |
| first_indexed | 2024-09-23T14:50:41Z |
| format | Article |
| id | mit-1721.1/60354 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:50:41Z |
| publishDate | 2010 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/603542022-10-01T22:51:56Z Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap Chuang, Isaac L. Wang, Shannon Xuanyue Labaziewicz, Jaroslaw Ge, Yufei Shewmon, Ruth Massachusetts Institute of Technology. Department of Physics Chuang, Isaac Chuang, Isaac L. Wang, Shannon Xuanyue Labaziewicz, Jaroslaw Ge, Yufei Shewmon, Ruth We demonstrate quantum control techniques for a single trapped ion in a cryogenic, surface-electrode trap. A narrow optical transition of Sr[superscript +] along with the ground and first excited motional states of the harmonic trapping potential form a two-qubit system. The optical qubit transition is susceptible to magnetic field fluctuations, which we stabilize with a simple and compact method using superconducting rings. Decoherence of the motional qubit is suppressed by the cryogenic environment. ac Stark shift correction is accomplished by controlling the laser phase in the pulse sequencer, eliminating the need for an additional laser. Quantum process tomography is implemented on atomic and motional states by use of conditional pulse sequences. With these techniques, we demonstrate a Cirac-Zoller controlled-not gate in a single ion with a mean fidelity of 91(1)%. Japan. Ministry of Education, Culture, Sports, Science and Technology National Science Foundation (U.S.). Center for Ultracold Atoms United States. Intelligence Advanced Research Projects Activity. COMMIT Program 2010-12-21T22:31:32Z 2010-12-21T22:31:32Z 2010-06 2009-12 Article http://purl.org/eprint/type/JournalArticle 1050-2947 1094-1622 http://hdl.handle.net/1721.1/60354 Wang, Shannon X. et al. “Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap.” Physical Review A 81.6 (2010): 062332. ©2010 The American Physical Society. https://orcid.org/0000-0001-7296-523X en_US http://dx.doi.org/10.1103/PhysRevA.81.062332 Physical Review A Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS |
| spellingShingle | Chuang, Isaac L. Wang, Shannon Xuanyue Labaziewicz, Jaroslaw Ge, Yufei Shewmon, Ruth Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap |
| title | Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap |
| title_full | Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap |
| title_fullStr | Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap |
| title_full_unstemmed | Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap |
| title_short | Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap |
| title_sort | demonstration of a quantum logic gate in a cryogenic surface electrode ion trap |
| url | http://hdl.handle.net/1721.1/60354 https://orcid.org/0000-0001-7296-523X |
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