Physics and simulation of transport processes in hybrid organic semiconductor devices

Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2010.

Bibliographic Details
Main Author: Rousseau, Ian Michael
Other Authors: Vladimir Bulović and Marin Sojačić.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2011
Subjects:
Online Access:http://hdl.handle.net/1721.1/61264
_version_ 1811077333101051904
author Rousseau, Ian Michael
author2 Vladimir Bulović and Marin Sojačić.
author_facet Vladimir Bulović and Marin Sojačić.
Rousseau, Ian Michael
author_sort Rousseau, Ian Michael
collection MIT
description Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2010.
first_indexed 2024-09-23T10:41:17Z
format Thesis
id mit-1721.1/61264
institution Massachusetts Institute of Technology
language eng
last_indexed 2024-09-23T10:41:17Z
publishDate 2011
publisher Massachusetts Institute of Technology
record_format dspace
spelling mit-1721.1/612642019-04-11T02:21:26Z Physics and simulation of transport processes in hybrid organic semiconductor devices Rousseau, Ian Michael Vladimir Bulović and Marin Sojačić. Massachusetts Institute of Technology. Dept. of Physics. Massachusetts Institute of Technology. Dept. of Physics. Physics. Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2010. Cataloged from PDF version of thesis. Includes bibliographical references (p. 48-51). Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' amorphous nature allow utilization of cheap, high-throughput manufacturing techniques, it poses a unique challenge: the physics of carrier and excitation transport in amorphous semiconductors is fundamentally different from their crystalline semiconductor counterparts. Excitations remain localized on single molecules or nanocrystals; the drift-diffusion equations, which describe carrier transport in delocalized states near thermal equilibrium, are no longer valid. A computational model for device operation would give researchers a powerful tool to design and improve devices. This work presents a novel one-dimensional discrete model that combines the computational speed of simulations based on the drift-diffusion equations with the accuracy and flexibility of Monte Carlo simulations. The one-dimensional model is shown to be exactly equivalent to the drift-diffusion model in the limits of small applied field, narrow densities of state, and low carrier concentrations. In this limit, the Einstein relation for Brownian motion holds and the transport parameters in the one-dimensional discrete model can be directly estimated from experimentally-measurable quantities. The model is implemented in an object-oriented Python computational framework. Finally, two test cases are numerically studied: an initial, test device with fictitious parameters and a well-known organic light-emitting diode. Preliminary results demonstrate reproduce experimental current-voltage characteristics over a wide range of bias voltages. by Ian Michael Rousseau. S.B. 2011-02-23T14:38:31Z 2011-02-23T14:38:31Z 2010 2010 Thesis http://hdl.handle.net/1721.1/61264 701915318 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 51 p. application/pdf Massachusetts Institute of Technology
spellingShingle Physics.
Rousseau, Ian Michael
Physics and simulation of transport processes in hybrid organic semiconductor devices
title Physics and simulation of transport processes in hybrid organic semiconductor devices
title_full Physics and simulation of transport processes in hybrid organic semiconductor devices
title_fullStr Physics and simulation of transport processes in hybrid organic semiconductor devices
title_full_unstemmed Physics and simulation of transport processes in hybrid organic semiconductor devices
title_short Physics and simulation of transport processes in hybrid organic semiconductor devices
title_sort physics and simulation of transport processes in hybrid organic semiconductor devices
topic Physics.
url http://hdl.handle.net/1721.1/61264
work_keys_str_mv AT rousseauianmichael physicsandsimulationoftransportprocessesinhybridorganicsemiconductordevices