A Ge-on-Si laser for electronic-photonic integration
We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2011
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| Online Access: | http://hdl.handle.net/1721.1/61670 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1811088489494609920 |
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| author | Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen |
| author_sort | Sun, Xiaochen |
| collection | MIT |
| description | We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications. |
| first_indexed | 2024-09-23T14:02:58Z |
| format | Article |
| id | mit-1721.1/61670 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:02:58Z |
| publishDate | 2011 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/616702022-09-28T17:57:43Z A Ge-on-Si laser for electronic-photonic integration Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Kimerling, Lionel C. Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications. 2011-03-11T15:58:49Z 2011-03-11T15:58:49Z 2009-08 2009-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-55752-869-8 INSPEC Accession Number: 10843179 http://hdl.handle.net/1721.1/61670 Sun, Xiaochen, et al. “A Ge-on-Si laser for electronic-photonic integration.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2. ©2009 IEEE. https://orcid.org/0000-0002-3913-6189 en_US Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum Electronics and Laser Science Conference. CLEO/QELS 2009. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen A Ge-on-Si laser for electronic-photonic integration |
| title | A Ge-on-Si laser for electronic-photonic integration |
| title_full | A Ge-on-Si laser for electronic-photonic integration |
| title_fullStr | A Ge-on-Si laser for electronic-photonic integration |
| title_full_unstemmed | A Ge-on-Si laser for electronic-photonic integration |
| title_short | A Ge-on-Si laser for electronic-photonic integration |
| title_sort | ge on si laser for electronic photonic integration |
| url | http://hdl.handle.net/1721.1/61670 https://orcid.org/0000-0002-3913-6189 |
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