Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
This brief aims to show the effects of threading edge dislocations on the dc and RF performance of GaN highelectron mobility transistor (HEMT) devices. A state-of-the-art high-frequency and high-power HEMT was investigated with our full-band cellular Monte Carlo (CMC) simulator, which includes...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2011
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| Online Access: | http://hdl.handle.net/1721.1/61964 https://orcid.org/0000-0002-2190-563X |
| Summary: | This brief aims to show the effects of threading
edge dislocations on the dc and RF performance of GaN highelectron
mobility transistor (HEMT) devices. A state-of-the-art
high-frequency and high-power HEMT was investigated with our
full-band cellular Monte Carlo (CMC) simulator, which includes
the full details of the band structure and the phonon spectra. A
complete characterization of the device has been performed using
experimental data to calibrate the few adjustable parameters of
the simulator. Thermal simulations were also carried out with
commercial software in order to operate the corrections needed
to model thermal effects. The approach of Weimann based on the
results of Read, Bonch-Bruevich and Glasko, and Pödör was then
used to model with our CMC code the dislocation effects on the
transport properties of HEMT devices. Our simulations indicate
that GaN HEMT performance exhibits a fairly large dependence
on the density of thread dislocation defects. Furthermore, we show
that a threshold concentration exists, above which a complete
degradation of the device operation occurs. |
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