Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

This brief aims to show the effects of threading edge dislocations on the dc and RF performance of GaN highelectron mobility transistor (HEMT) devices. A state-of-the-art high-frequency and high-power HEMT was investigated with our full-band cellular Monte Carlo (CMC) simulator, which includes...

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Bibliographic Details
Main Authors: Marino, Fabio Alessio, Faralli, Nicolas, Palacios, Tomas, Ferry, David K., Goodnick, Stephan M., Saraniti, Marco
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2011
Online Access:http://hdl.handle.net/1721.1/61964
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/61964
https://orcid.org/0000-0002-2190-563X

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