Toward a Germanium Laser for Integrated Silicon Photonics
It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discu...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2011
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| Online Access: | http://hdl.handle.net/1721.1/62164 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1811070133395783680 |
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| author | Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen |
| author_sort | Sun, Xiaochen |
| collection | MIT |
| description | It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs. |
| first_indexed | 2024-09-23T08:26:51Z |
| format | Article |
| id | mit-1721.1/62164 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:26:51Z |
| publishDate | 2011 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/621642022-09-30T09:19:33Z Toward a Germanium Laser for Integrated Silicon Photonics Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Kimerling, Lionel C. Kimerling, Lionel C. Liu, Jifeng Sun, Xiaochen Michel, Jurgen It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs. United States. Air Force Office of Scientific Research (Silicon-Based Laser Initiative of the Multidisciplinary University Research Initiative (MURI)) 2011-04-07T20:41:46Z 2011-04-07T20:41:46Z 2010-02 2009-06 Article http://purl.org/eprint/type/JournalArticle 1077-260X INSPEC Accession Number: 11105508 http://hdl.handle.net/1721.1/62164 Kimerling, L.C., and J. Michel, with Xiaochen Sun and Jifeng Liu. “Toward a Germanium Laser for Integrated Silicon Photonics.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 124-131. © 2010 IEEE. https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1109/jstqe.2009.2027445 IEEE Journal of Selected Topics in Quantum Electronics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen Toward a Germanium Laser for Integrated Silicon Photonics |
| title | Toward a Germanium Laser for Integrated Silicon Photonics |
| title_full | Toward a Germanium Laser for Integrated Silicon Photonics |
| title_fullStr | Toward a Germanium Laser for Integrated Silicon Photonics |
| title_full_unstemmed | Toward a Germanium Laser for Integrated Silicon Photonics |
| title_short | Toward a Germanium Laser for Integrated Silicon Photonics |
| title_sort | toward a germanium laser for integrated silicon photonics |
| url | http://hdl.handle.net/1721.1/62164 https://orcid.org/0000-0002-3913-6189 |
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