Toward a Germanium Laser for Integrated Silicon Photonics
It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discu...
| Main Authors: | , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | en_US |
| 出版: |
Institute of Electrical and Electronics Engineers
2011
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| 在線閱讀: | http://hdl.handle.net/1721.1/62164 https://orcid.org/0000-0002-3913-6189 |