A 512kb 8T SRAM macro operating down to 0.57V with an AC-coupled sense amplifier and embedded data-retention-voltage sensor in 45nm SOI CMOS

A 512kb 8T SRAM macro operating down to 0.57V with an AC-coupled sense amplifier and embedded data-retention-voltage sensor in 45nm SOI CMOS

An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2 V down to 0.57 V with access times from 400 ps to 3.4 ns. Timing variation and the challenge of low-voltage operation are addressed with an AC-coupled sense amplifier. An area efficient data path is achieved with a...

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Bibliographic Details
Main Authors:	Qazi, Masood, Stawiasz, Kevin, Chang, Leland, Chandrakasan, Anantha P.
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	en_US
Published:	Institute of Electrical and Electronics Engineers 2011
Online Access:	http://hdl.handle.net/1721.1/62194 https://orcid.org/0000-0002-5977-2748

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