Operation and Optimization of Silicon-Diode-Based Optical Modulators

An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a VπL...

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Main Authors: Spector, Steven Jay, Sorace, Cheryl M., Geis, Michael W., Grein, Matthew E., Yoon, Jung Uk, Lyszczarz, Theodore M., Ippen, Erich P., Kaertner, Franz X.
Other Authors: Lincoln Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2011
Online Access:http://hdl.handle.net/1721.1/62220
https://orcid.org/0000-0002-8733-2555
https://orcid.org/0000-0002-6032-8636
_version_ 1811068273252368384
author Spector, Steven Jay
Sorace, Cheryl M.
Geis, Michael W.
Grein, Matthew E.
Yoon, Jung Uk
Lyszczarz, Theodore M.
Ippen, Erich P.
Kaertner, Franz X.
author2 Lincoln Laboratory
author_facet Lincoln Laboratory
Spector, Steven Jay
Sorace, Cheryl M.
Geis, Michael W.
Grein, Matthew E.
Yoon, Jung Uk
Lyszczarz, Theodore M.
Ippen, Erich P.
Kaertner, Franz X.
author_sort Spector, Steven Jay
collection MIT
description An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a VπL [V subscript pi L] of 4.0 V·cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a VπL [V subscript pi L] as low as 0.0025 V·cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a VπL [V subscript pi L] of 0.5 V·cm.
first_indexed 2024-09-23T07:53:52Z
format Article
id mit-1721.1/62220
institution Massachusetts Institute of Technology
language en_US
last_indexed 2024-09-23T07:53:52Z
publishDate 2011
publisher Institute of Electrical and Electronics Engineers
record_format dspace
spelling mit-1721.1/622202022-09-23T09:27:34Z Operation and Optimization of Silicon-Diode-Based Optical Modulators Spector, Steven Jay Sorace, Cheryl M. Geis, Michael W. Grein, Matthew E. Yoon, Jung Uk Lyszczarz, Theodore M. Ippen, Erich P. Kaertner, Franz X. Lincoln Laboratory Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Kaertner, Franz X. Spector, Steven Jay Sorace, Cheryl M. Geis, Michael W. Grein, Matthew E. Yoon, Jung Uk Lyszczarz, Theodore M. Ippen, Erich P. Kaertner, Franz X. An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a VπL [V subscript pi L] of 4.0 V·cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a VπL [V subscript pi L] as low as 0.0025 V·cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a VπL [V subscript pi L] of 0.5 V·cm. United States. Defense Advanced Research Projects Agency. Electronic and Photonic Integrated Circuit (EPIC) Program (Air Force Contract FA8721-05-C-0002) (Contract W911NF-04-1-0431) National Science Foundation (U.S.) Ida M. Green Fellowship 2011-04-15T22:10:34Z 2011-04-15T22:10:34Z 2010-02 2009-07 Article http://purl.org/eprint/type/JournalArticle 1077-260X INSPEC Accession Number: 11105496 http://hdl.handle.net/1721.1/62220 Spector, S.J. et al. “Operation and Optimization of Silicon-Diode-Based Optical Modulators.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 165-172. © 2010 IEEE https://orcid.org/0000-0002-8733-2555 https://orcid.org/0000-0002-6032-8636 en_US http://dx.doi.org/10.1109/jstqe.2009.2027817 IEEE journal of selected topics in quantum electronics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE
spellingShingle Spector, Steven Jay
Sorace, Cheryl M.
Geis, Michael W.
Grein, Matthew E.
Yoon, Jung Uk
Lyszczarz, Theodore M.
Ippen, Erich P.
Kaertner, Franz X.
Operation and Optimization of Silicon-Diode-Based Optical Modulators
title Operation and Optimization of Silicon-Diode-Based Optical Modulators
title_full Operation and Optimization of Silicon-Diode-Based Optical Modulators
title_fullStr Operation and Optimization of Silicon-Diode-Based Optical Modulators
title_full_unstemmed Operation and Optimization of Silicon-Diode-Based Optical Modulators
title_short Operation and Optimization of Silicon-Diode-Based Optical Modulators
title_sort operation and optimization of silicon diode based optical modulators
url http://hdl.handle.net/1721.1/62220
https://orcid.org/0000-0002-8733-2555
https://orcid.org/0000-0002-6032-8636
work_keys_str_mv AT spectorstevenjay operationandoptimizationofsilicondiodebasedopticalmodulators
AT soracecherylm operationandoptimizationofsilicondiodebasedopticalmodulators
AT geismichaelw operationandoptimizationofsilicondiodebasedopticalmodulators
AT greinmatthewe operationandoptimizationofsilicondiodebasedopticalmodulators
AT yoonjunguk operationandoptimizationofsilicondiodebasedopticalmodulators
AT lyszczarztheodorem operationandoptimizationofsilicondiodebasedopticalmodulators
AT ippenerichp operationandoptimizationofsilicondiodebasedopticalmodulators
AT kaertnerfranzx operationandoptimizationofsilicondiodebasedopticalmodulators