Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freesta...
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| Format: | Article |
| Language: | en_US |
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American Physical Society
2011
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| Online Access: | http://hdl.handle.net/1721.1/62841 https://orcid.org/0000-0003-4148-2424 |
| _version_ | 1811072966959562752 |
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| author | Ferralis, Nicola Maboudian, Roya Carraro, Carlo |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Ferralis, Nicola Maboudian, Roya Carraro, Carlo |
| author_sort | Ferralis, Nicola |
| collection | MIT |
| description | The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol. |
| first_indexed | 2024-09-23T09:24:59Z |
| format | Article |
| id | mit-1721.1/62841 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:24:59Z |
| publishDate | 2011 |
| publisher | American Physical Society |
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| spelling | mit-1721.1/628412022-09-26T11:23:32Z Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering Ferralis, Nicola Maboudian, Roya Carraro, Carlo Massachusetts Institute of Technology. Department of Materials Science and Engineering Ferralis, Nicola Ferralis, Nicola The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol. National Science Foundation (U.S.) (EEC-0832819) National Science Foundation (U.S.) (CMMI-0825531) United States. Defense Advanced Research Projects Agency (DARPA). Microsystems Technology Office 2011-05-19T13:31:11Z 2011-05-19T13:31:11Z 2011-02 2011-01 Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/62841 Ferralis, Nicola, Roya Maboudian, and Carlo Carraro. “Determination of Substrate Pinning in Epitaxial and Supported Graphene Layers via Raman Scattering.” Physical Review B 83.8 (2011) : 081410. ©2011 American Physical Society https://orcid.org/0000-0003-4148-2424 en_US http://dx.doi.org/10.1103/PhysRevB.83.081410 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS |
| spellingShingle | Ferralis, Nicola Maboudian, Roya Carraro, Carlo Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering |
| title | Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering |
| title_full | Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering |
| title_fullStr | Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering |
| title_full_unstemmed | Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering |
| title_short | Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering |
| title_sort | determination of substrate pinning in epitaxial and supported graphene layers via raman scattering |
| url | http://hdl.handle.net/1721.1/62841 https://orcid.org/0000-0003-4148-2424 |
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