Structural transitions and relaxation processes during the epitaxial growth of ultrathin CaF2 films on Si(111)
The structure and morphology of ultrathin lattice matched CaF2 films of very few monolayers thickness, which were deposited on Si(111) substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Physical Society
2011
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| Online Access: | http://hdl.handle.net/1721.1/64978 |