Fiber draw synthesis
The synthesis of a high-melting temperature semiconductor in a low-temperature fiber drawing process is demonstrated, substantially expanding the set of materials that can be incorporated into fibers. Reagents in the solid state are arranged in proximate domains within a fiber preform. The preform i...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
National Academy of Sciences (U.S.)
2011
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| Online Access: | http://hdl.handle.net/1721.1/66268 https://orcid.org/0000-0001-9752-2283 https://orcid.org/0000-0002-7244-3682 https://orcid.org/0000-0003-2201-5257 |
| Summary: | The synthesis of a high-melting temperature semiconductor in a low-temperature fiber drawing process is demonstrated, substantially expanding the set of materials that can be incorporated into fibers. Reagents in the solid state are arranged in proximate domains within a fiber preform. The preform is fluidized at elevated temperatures and drawn into fiber, reducing the lateral dimensions and bringing the domains into intimate contact to enable chemical reaction. A polymer preform containing a thin layer of selenium contacted by tin–zinc wires is drawn to yield electrically contacted crystalline ZnSe domains of sub-100-nm scales. The in situ synthesized compound semiconductor becomes the basis for an electronic heterostructure diode of arbitrary length in the fiber. The ability to synthesize materials within fibers while precisely controlling their geometry and electrical connectivity at submicron scales presents new opportunities for increasing the complexity and functionality of fiber structures. |
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