Development of gallium nitride power transistors
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2011.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2011
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| Online Access: | http://hdl.handle.net/1721.1/66454 |
| _version_ | 1811068571818655744 |
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| author | Piedra, Daniel, Ph. D. Massachusetts Institute of Technology |
| author2 | Tomás Palacios. |
| author_facet | Tomás Palacios. Piedra, Daniel, Ph. D. Massachusetts Institute of Technology |
| author_sort | Piedra, Daniel, Ph. D. Massachusetts Institute of Technology |
| collection | MIT |
| description | Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2011. |
| first_indexed | 2024-09-23T07:57:54Z |
| format | Thesis |
| id | mit-1721.1/66454 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T07:57:54Z |
| publishDate | 2011 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/664542022-01-13T07:54:29Z Development of gallium nitride power transistors Piedra, Daniel, Ph. D. Massachusetts Institute of Technology Tomás Palacios. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical Engineering and Computer Science. Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2011. "November 2010." Cataloged from PDF version of thesis. Includes bibliographical references (p. 78-79). GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power devices optimized for their use in efficient power distribution systems in computer micro-processors. An existing process flow was used to fabricate the baseline single-finger transistors and additional process steps were developed and optimized to fabricate multi-finger devices with total gate widths up to 12mm. These transistors offer the current and on-resistance levels required by future GaN-based power converters. Transistors with various gate widths were fabricated and characterized by DC and capacitancevoltage measurements to study how the main transistor metrics scale with gate width. by Daniel Piedra. M.Eng. 2011-10-17T21:27:49Z 2011-10-17T21:27:49Z 2010 2011 Thesis http://hdl.handle.net/1721.1/66454 756037142 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 79 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Piedra, Daniel, Ph. D. Massachusetts Institute of Technology Development of gallium nitride power transistors |
| title | Development of gallium nitride power transistors |
| title_full | Development of gallium nitride power transistors |
| title_fullStr | Development of gallium nitride power transistors |
| title_full_unstemmed | Development of gallium nitride power transistors |
| title_short | Development of gallium nitride power transistors |
| title_sort | development of gallium nitride power transistors |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/66454 |
| work_keys_str_mv | AT piedradanielphdmassachusettsinstituteoftechnology developmentofgalliumnitridepowertransistors |