Geometry-dependent critical currents in superconducting nanocircuits

In this paper, we calculate the critical currents in thin superconducting strips with sharp right-angle turns, 180∘ turnarounds, and more complicated geometries, where all the line widths are much smaller than the Pearl length Λ=2λ2/d. We define the critical current as the current that reduces the G...

Full description

Bibliographic Details
Main Authors: Clem, John R., Berggren, Karl K.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/69832
https://orcid.org/0000-0001-7453-9031
_version_ 1826190414203322368
author Clem, John R.
Berggren, Karl K.
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Clem, John R.
Berggren, Karl K.
author_sort Clem, John R.
collection MIT
description In this paper, we calculate the critical currents in thin superconducting strips with sharp right-angle turns, 180∘ turnarounds, and more complicated geometries, where all the line widths are much smaller than the Pearl length Λ=2λ2/d. We define the critical current as the current that reduces the Gibbs-free-energy barrier to zero. We show that current crowding, which occurs whenever the current rounds a sharp turn, tends to reduce the critical current, but we also show that when the radius of curvature is less than the coherence length, this effect is partially compensated by a radius-of-curvature effect. We propose several patterns with rounded corners to avoid critical-current reduction due to current crowding. These results are relevant to superconducting nanowire single-photon detectors, where they suggest a means of improving the bias conditions and reducing dark counts. These results also have relevance to normal-metal nanocircuits, as these patterns can reduce the electrical resistance, electromigration, and hot spots caused by nonuniform heating.
first_indexed 2024-09-23T08:39:54Z
format Article
id mit-1721.1/69832
institution Massachusetts Institute of Technology
language en_US
last_indexed 2024-09-23T08:39:54Z
publishDate 2012
publisher American Physical Society
record_format dspace
spelling mit-1721.1/698322022-09-30T10:20:02Z Geometry-dependent critical currents in superconducting nanocircuits Clem, John R. Berggren, Karl K. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Berggren, Karl K. Berggren, Karl K. In this paper, we calculate the critical currents in thin superconducting strips with sharp right-angle turns, 180∘ turnarounds, and more complicated geometries, where all the line widths are much smaller than the Pearl length Λ=2λ2/d. We define the critical current as the current that reduces the Gibbs-free-energy barrier to zero. We show that current crowding, which occurs whenever the current rounds a sharp turn, tends to reduce the critical current, but we also show that when the radius of curvature is less than the coherence length, this effect is partially compensated by a radius-of-curvature effect. We propose several patterns with rounded corners to avoid critical-current reduction due to current crowding. These results are relevant to superconducting nanowire single-photon detectors, where they suggest a means of improving the bias conditions and reducing dark counts. These results also have relevance to normal-metal nanocircuits, as these patterns can reduce the electrical resistance, electromigration, and hot spots caused by nonuniform heating. 2012-03-22T15:36:18Z 2012-03-22T15:36:18Z 2011-11 2011-11 Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/69832 Clem, John, and Karl Berggren. “Geometry-dependent Critical Currents in Superconducting Nanocircuits.” Physical Review B 84.17 (2011): [27 pages]. https://orcid.org/0000-0001-7453-9031 en_US http://dx.doi.org/10.1103/PhysRevB.84.174510 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS
spellingShingle Clem, John R.
Berggren, Karl K.
Geometry-dependent critical currents in superconducting nanocircuits
title Geometry-dependent critical currents in superconducting nanocircuits
title_full Geometry-dependent critical currents in superconducting nanocircuits
title_fullStr Geometry-dependent critical currents in superconducting nanocircuits
title_full_unstemmed Geometry-dependent critical currents in superconducting nanocircuits
title_short Geometry-dependent critical currents in superconducting nanocircuits
title_sort geometry dependent critical currents in superconducting nanocircuits
url http://hdl.handle.net/1721.1/69832
https://orcid.org/0000-0001-7453-9031
work_keys_str_mv AT clemjohnr geometrydependentcriticalcurrentsinsuperconductingnanocircuits
AT berggrenkarlk geometrydependentcriticalcurrentsinsuperconductingnanocircuits