Single-color centers implanted in diamond nanostructures
The development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Institute of Physics Publishing
2012
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| Online Access: | http://hdl.handle.net/1721.1/70538 https://orcid.org/0000-0002-3969-3604 |
| _version_ | 1826199071734366208 |
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| author | Hausmann, Birgit J. M. Babinec, Thomas M. Choy, Jennifer T. Hodges, Jonathan S. Hong, Sungkun Bulu, Irfan Yacoby, Amir Lukin, Mikhail D. |
| author2 | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Hausmann, Birgit J. M. Babinec, Thomas M. Choy, Jennifer T. Hodges, Jonathan S. Hong, Sungkun Bulu, Irfan Yacoby, Amir Lukin, Mikhail D. |
| author_sort | Hausmann, Birgit J. M. |
| collection | MIT |
| description | The development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20 nm) to generate nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal prior to device fabrication. Individual NV centers are then mechanically isolated by etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1 μm) implantation of individual NV centers into diamond nanowires as a post-processing step. The high single-photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allowed us to observe sustained photon anti-bunching even at high pump powers. |
| first_indexed | 2024-09-23T11:14:00Z |
| format | Article |
| id | mit-1721.1/70538 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:14:00Z |
| publishDate | 2012 |
| publisher | Institute of Physics Publishing |
| record_format | dspace |
| spelling | mit-1721.1/705382022-09-27T18:02:28Z Single-color centers implanted in diamond nanostructures Hausmann, Birgit J. M. Babinec, Thomas M. Choy, Jennifer T. Hodges, Jonathan S. Hong, Sungkun Bulu, Irfan Yacoby, Amir Lukin, Mikhail D. Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Hodges, Jonathan S. Hodges, Jonathan S. The development of material-processing techniques that can be used to generate optical diamond nanostructures containing a single-color center is an important problem in quantum science and technology. In this work, we present the combination of ion implantation and top-down diamond nanofabrication in two scenarios: diamond nanopillars and diamond nanowires. The first device consists of a 'shallow' implant (~20 nm) to generate nitrogen-vacancy (NV) color centers near the top surface of the diamond crystal prior to device fabrication. Individual NV centers are then mechanically isolated by etching a regular array of nanopillars in the diamond surface. Photon anti-bunching measurements indicate that a high yield (>10%) of the devices contain a single NV center. The second device demonstrates 'deep' (~1 μm) implantation of individual NV centers into diamond nanowires as a post-processing step. The high single-photon flux of the nanowire geometry, combined with the low background fluorescence of the ultrapure diamond, allowed us to observe sustained photon anti-bunching even at high pump powers. United States. Dept. of Defense (National Defense Science and Engineering Graduate Fellowship) National Science Foundation (U.S.) (NSF Graduate Research Fellowship) Alfred P. Sloan Foundation 2012-05-09T14:05:18Z 2012-05-09T14:05:18Z 2011-04 2010-09 Article http://purl.org/eprint/type/JournalArticle 1367-2630 http://hdl.handle.net/1721.1/70538 Hausmann, Birgit J M et al. “Single-color Centers Implanted in Diamond Nanostructures.” New Journal of Physics 13.4 (2011): 045004. Web. https://orcid.org/0000-0002-3969-3604 en_US http://dx.doi.org/10.1088/1367-2630/13/4/045004 New Journal of Physics Creative Commons Attribution 3.0 http://creativecommons.org/licenses/by/3.0/ application/pdf Institute of Physics Publishing New Journal of Physics |
| spellingShingle | Hausmann, Birgit J. M. Babinec, Thomas M. Choy, Jennifer T. Hodges, Jonathan S. Hong, Sungkun Bulu, Irfan Yacoby, Amir Lukin, Mikhail D. Single-color centers implanted in diamond nanostructures |
| title | Single-color centers implanted in diamond nanostructures |
| title_full | Single-color centers implanted in diamond nanostructures |
| title_fullStr | Single-color centers implanted in diamond nanostructures |
| title_full_unstemmed | Single-color centers implanted in diamond nanostructures |
| title_short | Single-color centers implanted in diamond nanostructures |
| title_sort | single color centers implanted in diamond nanostructures |
| url | http://hdl.handle.net/1721.1/70538 https://orcid.org/0000-0002-3969-3604 |
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