High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2012
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| Online Access: | http://hdl.handle.net/1721.1/70906 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| _version_ | 1811093716524335104 |
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| author | Lu, Bin Saadat, Omair Irfan Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lu, Bin Saadat, Omair Irfan Palacios, Tomas |
| author_sort | Lu, Bin |
| collection | MIT |
| description | In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate controlling the threshold voltage and a long gate supporting the high-voltage drop from the drain. Using this new dual-gate technology, AlGaN/GaN E-mode transistors grown on a Si substrate have demonstrated a high threshold voltage of 2.9 V with a maximum drain current of 434 mA/mm and a specific on-resistance of 4.3 m Ω·cm2 at a breakdown voltage of 643 V. |
| first_indexed | 2024-09-23T15:49:30Z |
| format | Article |
| id | mit-1721.1/70906 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:49:30Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/709062022-09-29T16:22:18Z High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor Lu, Bin Saadat, Omair Irfan Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Palacios, Tomas Lu, Bin Saadat, Omair Irfan In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate controlling the threshold voltage and a long gate supporting the high-voltage drop from the drain. Using this new dual-gate technology, AlGaN/GaN E-mode transistors grown on a Si substrate have demonstrated a high threshold voltage of 2.9 V with a maximum drain current of 434 mA/mm and a specific on-resistance of 4.3 m Ω·cm2 at a breakdown voltage of 643 V. United States. Dept. of Energy (GIGA Project) Massachusetts Institute of Technology. Energy Initiative 2012-05-22T19:18:42Z 2012-05-22T19:18:42Z 2010-06 2010-06 Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 INSPEC Accession Number: 11477383 http://hdl.handle.net/1721.1/70906 Lu, Bin, Omair Irfan Saadat, and Tomás Palacios. “High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor.” IEEE Electron Device Letters 31.9 (2010): 990–992. Web. © 2010 IEEE. https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 en_US http://dx.doi.org/10.1109/led.2010.2055825 IEEE Electron Device Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Lu, Bin Saadat, Omair Irfan Palacios, Tomas High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor |
| title | High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor |
| title_full | High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor |
| title_fullStr | High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor |
| title_full_unstemmed | High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor |
| title_short | High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor |
| title_sort | high performance integrated dual gate algan gan enhancement mode transistor |
| url | http://hdl.handle.net/1721.1/70906 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
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