High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate...

书目详细资料
Main Authors:	Lu, Bin, Saadat, Omair Irfan, Palacios, Tomas
其他作者:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
格式:	文件
语言:	en_US
出版:	Institute of Electrical and Electronics Engineers 2012
在线阅读:	http://hdl.handle.net/1721.1/70906 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665

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