Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects
In this paper, we characterize the performance of monolithically integrated graphene interconnects on a prototype 0.35-μm CMOS chip. The test chip implements an array of transmitter/receivers to analyze the end-to-end data communication on graphene wires. Large-area graphene sheets are first grown b...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2012
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| Online Access: | http://hdl.handle.net/1721.1/70907 https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0003-0551-1208 |
| _version_ | 1826208910986444800 |
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| author | Lee, Kyeong-Jae Qazi, Masood Kong, Jing Chandrakasan, Anantha P. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lee, Kyeong-Jae Qazi, Masood Kong, Jing Chandrakasan, Anantha P. |
| author_sort | Lee, Kyeong-Jae |
| collection | MIT |
| description | In this paper, we characterize the performance of monolithically integrated graphene interconnects on a prototype 0.35-μm CMOS chip. The test chip implements an array of transmitter/receivers to analyze the end-to-end data communication on graphene wires. Large-area graphene sheets are first grown by chemical vapor deposition, which are then subsequently processed into narrow wires up to 1 mm in length. A low-swing signaling technique is applied, which results in a transmitter energy of 0.3-0.7 pJ/b·mm[superscript -1] and a total energy of 2.4-5.2 pJ/b·mm[superscript -1]. Bit error rates below 2 × 10[superscript -10] are measured using a 2[superscript 31] - 1 pseudorandom binary sequence. Minimum voltage swings of 100 mV at 1.5-V supply and 500 mV at 3.3-V supply have also been demonstrated. At present, the graphene wire is largely limited by its growth quality and high sheet resistance. |
| first_indexed | 2024-09-23T14:14:35Z |
| format | Article |
| id | mit-1721.1/70907 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:14:35Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/709072022-10-01T20:01:36Z Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects Lee, Kyeong-Jae Qazi, Masood Kong, Jing Chandrakasan, Anantha P. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Kong, Jing Lee, Kyeong-Jae Qazi, Masood Kong, Jing Chandrakasan, Anantha P. In this paper, we characterize the performance of monolithically integrated graphene interconnects on a prototype 0.35-μm CMOS chip. The test chip implements an array of transmitter/receivers to analyze the end-to-end data communication on graphene wires. Large-area graphene sheets are first grown by chemical vapor deposition, which are then subsequently processed into narrow wires up to 1 mm in length. A low-swing signaling technique is applied, which results in a transmitter energy of 0.3-0.7 pJ/b·mm[superscript -1] and a total energy of 2.4-5.2 pJ/b·mm[superscript -1]. Bit error rates below 2 × 10[superscript -10] are measured using a 2[superscript 31] - 1 pseudorandom binary sequence. Minimum voltage swings of 100 mV at 1.5-V supply and 500 mV at 3.3-V supply have also been demonstrated. At present, the graphene wire is largely limited by its growth quality and high sheet resistance. Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation) 2012-05-22T19:39:02Z 2012-05-22T19:39:02Z 2010-10 2010-08 Article http://purl.org/eprint/type/JournalArticle 0018-9383 1557-9646 http://hdl.handle.net/1721.1/70907 Lee, Kyeong-Jae et al. “Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects.” IEEE Transactions on Electron Devices 57.12 (2010): 3418–3425. Web.© 2010 IEEE. https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0003-0551-1208 en_US http://dx.doi.org/10.1109/ted.2010.2083667 IEEE Transactions on Electron Devices Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Lee, Kyeong-Jae Qazi, Masood Kong, Jing Chandrakasan, Anantha P. Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects |
| title | Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects |
| title_full | Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects |
| title_fullStr | Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects |
| title_full_unstemmed | Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects |
| title_short | Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects |
| title_sort | low swing signaling on monolithically integrated global graphene interconnects |
| url | http://hdl.handle.net/1721.1/70907 https://orcid.org/0000-0002-5977-2748 https://orcid.org/0000-0003-0551-1208 |
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