Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors
We have performed V[subscript DS] = 0 V and OFF-state step-stress experiments on GaN-on-Si and GaN-on-SiC high electron mobility transistors under UV illumination and in the dark. We have found that for both stress conditions, UV illumination decreases the critical voltage for the onset of degradati...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
|
| Online Access: | http://hdl.handle.net/1721.1/71581 |
| _version_ | 1811076706527608832 |
|---|---|
| author | Demirtas, Sefa del Alamo, Jesus A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Demirtas, Sefa del Alamo, Jesus A. |
| author_sort | Demirtas, Sefa |
| collection | MIT |
| description | We have performed V[subscript DS] = 0 V and OFF-state step-stress experiments on GaN-on-Si and GaN-on-SiC high electron mobility transistors under UV illumination and in the dark. We have found that for both stress conditions, UV illumination decreases the critical voltage for the onset of degradation in gate current in GaN-on-Si HEMTs in a pronounced way, but no such decrease is observed on SiC. This difference is attributed to UV-induced electron detrapping, which results in an increase in the electric field and, through the inverse piezoelectric effect, in the mechanical stress in the AlGaN barrier of the device. Due to the large number of traps in GaN-on-Si, this effect is clearer and more prominent than in GaN-on-SiC, which contains fewer traps in the fresh state. |
| first_indexed | 2024-09-23T10:26:16Z |
| format | Article |
| id | mit-1721.1/71581 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:26:16Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/715812022-09-30T21:08:58Z Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors Demirtas, Sefa del Alamo, Jesus A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories del Alamo, Jesus A. Demirtas, Sefa del Alamo, Jesus A. We have performed V[subscript DS] = 0 V and OFF-state step-stress experiments on GaN-on-Si and GaN-on-SiC high electron mobility transistors under UV illumination and in the dark. We have found that for both stress conditions, UV illumination decreases the critical voltage for the onset of degradation in gate current in GaN-on-Si HEMTs in a pronounced way, but no such decrease is observed on SiC. This difference is attributed to UV-induced electron detrapping, which results in an increase in the electric field and, through the inverse piezoelectric effect, in the mechanical stress in the AlGaN barrier of the device. Due to the large number of traps in GaN-on-Si, this effect is clearer and more prominent than in GaN-on-SiC, which contains fewer traps in the fresh state. United States. Defense Advanced Research Projects Agency United States. Office of Naval Research (MURI) 2012-07-11T15:32:19Z 2012-07-11T15:32:19Z 2010-06 2010-05 Article http://purl.org/eprint/type/ConferencePaper 1541-7026 978-1-4244-5430-3 INSPEC Accession Number: 11500973 http://hdl.handle.net/1721.1/71581 Demirtas, Sefa, and Jesus A. del Alamo. “Effect of trapping on the critical voltage for degradation in GaN high electron mobility transistors.” IEEE, 2010. 134-138. en_US http://dx.doi.org/10.1109/IRPS.2010.5488838 Proceedings of the IEEE International Reliability Physics Symposium (IRPS), 2010 Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) del Alamo via Amy Stout |
| spellingShingle | Demirtas, Sefa del Alamo, Jesus A. Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| title | Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| title_full | Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| title_fullStr | Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| title_full_unstemmed | Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| title_short | Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| title_sort | effect of trapping on the critical voltage for degradation in gan high electron mobility transistors |
| url | http://hdl.handle.net/1721.1/71581 |
| work_keys_str_mv | AT demirtassefa effectoftrappingonthecriticalvoltagefordegradationinganhighelectronmobilitytransistors AT delalamojesusa effectoftrappingonthecriticalvoltagefordegradationinganhighelectronmobilitytransistors |