Formation, migration, and clustering of delocalized vacancies and interstitials at a solid-state semicoherent interface
Atomistic simulations are used to study the formation, migration, and clustering of delocalized vacancies and interstitials at a model fcc-bcc semicoherent interface formed by adjacent layers of Cu and Nb. These defects migrate between interfacial trapping sites through a multistep mechanism that ma...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Physical Society
2012
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| Online Access: | http://hdl.handle.net/1721.1/71682 https://orcid.org/0000-0003-3949-0441 |