Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films
Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram in doped strontium titanate as a function of thermodynamic variables such as oxygen partial pressure and electronic chemical potential. Computational modeling of point-defect energetics demonstrates...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Physical Society
2012
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| Online Access: | http://hdl.handle.net/1721.1/71686 https://orcid.org/0000-0003-1281-2359 |
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| author | Ertekin, Elif Srinivasan, Varadharajan Ravichandran, Jayakanth Rossen, Pim B. Siemons, Wolter Majumdar, Arun Ramesh, Ramamoorthy Grossman, Jeffrey C. |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Ertekin, Elif Srinivasan, Varadharajan Ravichandran, Jayakanth Rossen, Pim B. Siemons, Wolter Majumdar, Arun Ramesh, Ramamoorthy Grossman, Jeffrey C. |
| author_sort | Ertekin, Elif |
| collection | MIT |
| description | Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram in doped strontium titanate as a function of thermodynamic variables such as oxygen partial pressure and electronic chemical potential. Computational modeling of point-defect energetics demonstrates that a complex interplay exists between dopants, thermodynamic parameters, and intrinsic defects in thin films of SrTiO[subscript 3] (STO). We synthesize STO thin films via pulsed laser deposition and explore this interplay between intrinsic defects, doping, compensation, and carrier concentration. Our point-defect analysis (i) demonstrates that careful control over growth conditions can result in the tunable presence of anion and cation vacancies, (ii) suggests that compensation mechanisms will pose intrinsic limits on the dopability of perovskites, and (iii) provides a guide for tailoring the properties of doped perovskite thin films. |
| first_indexed | 2024-09-23T15:02:35Z |
| format | Article |
| id | mit-1721.1/71686 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:02:35Z |
| publishDate | 2012 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/716862022-10-02T00:13:03Z Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films Ertekin, Elif Srinivasan, Varadharajan Ravichandran, Jayakanth Rossen, Pim B. Siemons, Wolter Majumdar, Arun Ramesh, Ramamoorthy Grossman, Jeffrey C. Massachusetts Institute of Technology. Department of Materials Science and Engineering Grossman, Jeffrey C. Ertekin, Elif Grossman, Jeffrey C. Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram in doped strontium titanate as a function of thermodynamic variables such as oxygen partial pressure and electronic chemical potential. Computational modeling of point-defect energetics demonstrates that a complex interplay exists between dopants, thermodynamic parameters, and intrinsic defects in thin films of SrTiO[subscript 3] (STO). We synthesize STO thin films via pulsed laser deposition and explore this interplay between intrinsic defects, doping, compensation, and carrier concentration. Our point-defect analysis (i) demonstrates that careful control over growth conditions can result in the tunable presence of anion and cation vacancies, (ii) suggests that compensation mechanisms will pose intrinsic limits on the dopability of perovskites, and (iii) provides a guide for tailoring the properties of doped perovskite thin films. United States. Dept. of Energy (Grant No. DE-SC0002623) National Science Foundation (U.S.) (NCSA) (Grant No. TG-DMR090027) United States. Dept. of Energy. Division of Materials Sciences and Engineering (Contract No. DE-AC02-05CH11231) 2012-07-18T17:18:12Z 2012-07-18T17:18:12Z 2012-05 2012-04 Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/71686 Ertekin, Elif et al. “Interplay Between Intrinsic Defects, Doping, and Free Carrier Concentration in SrTiO_{3} Thin Films.” Physical Review B 85.19 (2012). ©2012 American Physical Society https://orcid.org/0000-0003-1281-2359 en_US http://dx.doi.org/10.1103/PhysRevB.85.195460 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS |
| spellingShingle | Ertekin, Elif Srinivasan, Varadharajan Ravichandran, Jayakanth Rossen, Pim B. Siemons, Wolter Majumdar, Arun Ramesh, Ramamoorthy Grossman, Jeffrey C. Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films |
| title | Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films |
| title_full | Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films |
| title_fullStr | Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films |
| title_full_unstemmed | Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films |
| title_short | Interplay between intrinsic defects, doping, and free carrier concentration in SrTiO[subscript 3] thin films |
| title_sort | interplay between intrinsic defects doping and free carrier concentration in srtio subscript 3 thin films |
| url | http://hdl.handle.net/1721.1/71686 https://orcid.org/0000-0003-1281-2359 |
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