Magnetic tunnel junctions with MgO-EuO composite tunnel barriers

The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the molecular beam epitaxy method, we combine polycrystalline EuO with epitaxial MgO and construct magnetic tunnel junctions with such hybrid tunnel barriers. Tunnel magnetoresistance of over...

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Main Authors: Miao, Guoxing, Moodera, Jagadeesh
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/71710
https://orcid.org/0000-0002-2480-1211
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author Miao, Guoxing
Moodera, Jagadeesh
author2 Massachusetts Institute of Technology. Department of Physics
author_facet Massachusetts Institute of Technology. Department of Physics
Miao, Guoxing
Moodera, Jagadeesh
author_sort Miao, Guoxing
collection MIT
description The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the molecular beam epitaxy method, we combine polycrystalline EuO with epitaxial MgO and construct magnetic tunnel junctions with such hybrid tunnel barriers. Tunnel magnetoresistance of over 40% was achieved in junctions with oxygen-rich EuO. For lower oxygen concentration, magnetoresistance decreases dramatically and eventually vanishes, indicating that spin filtering is weakened when the transport is mainly mediated by excess conduction channels through defect sites.
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spelling mit-1721.1/717102022-10-01T01:36:21Z Magnetic tunnel junctions with MgO-EuO composite tunnel barriers Miao, Guoxing Moodera, Jagadeesh Massachusetts Institute of Technology. Department of Physics Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology) Moodera, Jagadeesh Miao, Guoxing Moodera, Jagadeesh The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the molecular beam epitaxy method, we combine polycrystalline EuO with epitaxial MgO and construct magnetic tunnel junctions with such hybrid tunnel barriers. Tunnel magnetoresistance of over 40% was achieved in junctions with oxygen-rich EuO. For lower oxygen concentration, magnetoresistance decreases dramatically and eventually vanishes, indicating that spin filtering is weakened when the transport is mainly mediated by excess conduction channels through defect sites. National Science Foundation (U.S.) (Grant No. DMR 0504158) United States. Office of Naval Research (Grant No. N00014- 09-1-0177) 2012-07-19T19:51:40Z 2012-07-19T19:51:40Z 2012-04 2012-02 Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/71710 Miao, Guo-Xing, and Jagadeesh S. Moodera. “Magnetic Tunnel Junctions with MgO-EuO Composite Tunnel Barriers.” Physical Review B 85.14 (2012). ©2012 American Physical Society https://orcid.org/0000-0002-2480-1211 en_US http://dx.doi.org/10.1103/PhysRevB.85.144424 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS
spellingShingle Miao, Guoxing
Moodera, Jagadeesh
Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
title Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
title_full Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
title_fullStr Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
title_full_unstemmed Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
title_short Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
title_sort magnetic tunnel junctions with mgo euo composite tunnel barriers
url http://hdl.handle.net/1721.1/71710
https://orcid.org/0000-0002-2480-1211
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