Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape
A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-κ/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI devices and universal (100) is observed for 15 nm-diameter circular Si nanowir...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/71882 https://orcid.org/0000-0002-7778-8073 |
| _version_ | 1811090277994070016 |
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| author | Hashemi, Pouya Teherani, James T. Hoyt, Judy L. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hashemi, Pouya Teherani, James T. Hoyt, Judy L. |
| author_sort | Hashemi, Pouya |
| collection | MIT |
| description | A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-κ/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI devices and universal (100) is observed for 15 nm-diameter circular Si nanowires, due to an optimized anneal process which smoothes and reshapes the suspended nanowires. Increasing hole mobility is experimentally observed with decreasing nanowire width down to 12 nm. The measured inversion capacitance-voltage characteristics are in excellent agreement with quantum mechanical simulations. In addition, a method to extract areal inversion charge density in Si nanowires is introduced and its impact on the mobility of Si nanowires with various shapes is explored. |
| first_indexed | 2024-09-23T14:40:43Z |
| format | Article |
| id | mit-1721.1/71882 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:40:43Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/718822022-10-01T22:02:05Z Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape Hashemi, Pouya Teherani, James T. Hoyt, Judy L. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Hoyt, Judy L. Hashemi, Pouya Teherani, James T. Hoyt, Judy L. A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-κ/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI devices and universal (100) is observed for 15 nm-diameter circular Si nanowires, due to an optimized anneal process which smoothes and reshapes the suspended nanowires. Increasing hole mobility is experimentally observed with decreasing nanowire width down to 12 nm. The measured inversion capacitance-voltage characteristics are in excellent agreement with quantum mechanical simulations. In addition, a method to extract areal inversion charge density in Si nanowires is introduced and its impact on the mobility of Si nanowires with various shapes is explored. Semiconductor Research Corporation. Center for Materials, Structures and Devices 2012-07-30T12:40:12Z 2012-07-30T12:40:12Z 2011-01 2010-12 Article http://purl.org/eprint/type/ConferencePaper 978-1-4424-7418-5 978-1-4244-7419-6 http://hdl.handle.net/1721.1/71882 Hashemi, Pouya, James T. Teherani, and Judy L. Hoyt. “Investigation of Hole Mobility in Gate-all-around Si Nanowire p-MOSFETs with high-к/metal-gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape.” IEEE, 2010. 34.5.1–34.5.4. © Copyright 2010 IEEE https://orcid.org/0000-0002-7778-8073 en_US http://dx.doi.org/ 10.1109/IEDM.2010.5703477 2010 IEEE International Electron Devices Meeting (IEDM) Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Hashemi, Pouya Teherani, James T. Hoyt, Judy L. Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape |
| title | Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape |
| title_full | Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape |
| title_fullStr | Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape |
| title_full_unstemmed | Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape |
| title_short | Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape |
| title_sort | investigation of hole mobility in gate all around si nanowire p mosfets with high k metal gate effects of hydrogen thermal annealing and nanowire shape |
| url | http://hdl.handle.net/1721.1/71882 https://orcid.org/0000-0002-7778-8073 |
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