Design methodology for a very high frequency resonant boost converter
This document introduces a design methodology for a resonant boost converter topology that is suitable for operation at very high frequencies. The topology we examine features a low parts count and fast transient response but suffers from higher device stresses compared to other topologies that use...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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IEEE Industry Applications Society
2012
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| Online Access: | http://hdl.handle.net/1721.1/72023 https://orcid.org/0000-0002-0746-6191 |
| _version_ | 1826205531570700288 |
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| author | Burkhart, Justin M. Korsunsky, Roman Perreault, David J. |
| author2 | Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems |
| author_facet | Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems Burkhart, Justin M. Korsunsky, Roman Perreault, David J. |
| author_sort | Burkhart, Justin M. |
| collection | MIT |
| description | This document introduces a design methodology for a resonant boost converter topology that is suitable for operation at very high frequencies. The topology we examine features a low parts count and fast transient response but suffers from higher device stresses compared to other topologies that use a larger number of passive components. A numerical design procedure is developed for this topology that does not rely on time-domain simulation sweeps across parameters. This allows the optimal converter design to be found for a particular main semiconductor switch. If an integrated power process is used where the designer has control over layout of the semiconductor switch, the optimal combination of converter design and semiconductor layout can be found. To validate the proposed converter topology and design approach, a 75 MHz prototype converter is designed and experimentally demonstrated. The performance of the prototype closely matches that predicted by the design procedure, and achieves good efficiency over a wide input voltage range. |
| first_indexed | 2024-09-23T13:14:31Z |
| format | Article |
| id | mit-1721.1/72023 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:14:31Z |
| publishDate | 2012 |
| publisher | IEEE Industry Applications Society |
| record_format | dspace |
| spelling | mit-1721.1/720232022-09-28T12:52:18Z Design methodology for a very high frequency resonant boost converter Burkhart, Justin M. Korsunsky, Roman Perreault, David J. Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems Perreault, David J. Perreault, David J. Burkhart, Justin M. This document introduces a design methodology for a resonant boost converter topology that is suitable for operation at very high frequencies. The topology we examine features a low parts count and fast transient response but suffers from higher device stresses compared to other topologies that use a larger number of passive components. A numerical design procedure is developed for this topology that does not rely on time-domain simulation sweeps across parameters. This allows the optimal converter design to be found for a particular main semiconductor switch. If an integrated power process is used where the designer has control over layout of the semiconductor switch, the optimal combination of converter design and semiconductor layout can be found. To validate the proposed converter topology and design approach, a 75 MHz prototype converter is designed and experimentally demonstrated. The performance of the prototype closely matches that predicted by the design procedure, and achieves good efficiency over a wide input voltage range. 2012-08-07T20:24:23Z 2012-08-07T20:24:23Z 2010-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-5394-8 978-1-4244-5393-1 INSPEC Accession Number: 11496590 http://hdl.handle.net/1721.1/72023 Burkhart, Justin M., Roman Korsunsky, and David J. Perreault. “Design Methodology for a Very High Frequency Resonant Boost Converter.” IEEE, 2010. 1902–1909. Web. © 2010 IEEE. https://orcid.org/0000-0002-0746-6191 en_US http://dx.doi.org/10.1109/IPEC.2010.5542054 Proceedings of the 2010 International Power Electronics Conference, IPEC 2010 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf IEEE Industry Applications Society IEEE |
| spellingShingle | Burkhart, Justin M. Korsunsky, Roman Perreault, David J. Design methodology for a very high frequency resonant boost converter |
| title | Design methodology for a very high frequency resonant boost converter |
| title_full | Design methodology for a very high frequency resonant boost converter |
| title_fullStr | Design methodology for a very high frequency resonant boost converter |
| title_full_unstemmed | Design methodology for a very high frequency resonant boost converter |
| title_short | Design methodology for a very high frequency resonant boost converter |
| title_sort | design methodology for a very high frequency resonant boost converter |
| url | http://hdl.handle.net/1721.1/72023 https://orcid.org/0000-0002-0746-6191 |
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