High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulat...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/72116 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| _version_ | 1811079493004034048 |
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| author | Lu, Bin Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lu, Bin Palacios, Tomas |
| author_sort | Lu, Bin |
| collection | MIT |
| description | In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm[superscript 2] has been achieved. |
| first_indexed | 2024-09-23T11:15:54Z |
| format | Article |
| id | mit-1721.1/72116 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:15:54Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/721162022-09-27T18:15:52Z High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology Lu, Bin Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Lu, Bin Palacios, Tomas In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm[superscript 2] has been achieved. 2012-08-14T15:20:34Z 2012-08-14T15:20:34Z 2010-07 2010-03 Article http://purl.org/eprint/type/JournalArticle 0741-3106 http://hdl.handle.net/1721.1/72116 Lu, Bin, and Tomás Palacios. “High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology.” IEEE Electron Device Letters 31.9 (2010): 951–953. © Copyright 2010 IEEE https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 en_US http://dx.doi.org/10.1109/led.2010.2052587 IEEE Electron Device Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Lu, Bin Palacios, Tomas High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology |
| title | High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology |
| title_full | High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology |
| title_fullStr | High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology |
| title_full_unstemmed | High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology |
| title_short | High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology |
| title_sort | high breakdown hbox 1500 v algan gan hemts by substrate transfer technology |
| url | http://hdl.handle.net/1721.1/72116 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| work_keys_str_mv | AT lubin highbreakdownhbox1500valganganhemtsbysubstratetransfertechnology AT palaciostomas highbreakdownhbox1500valganganhemtsbysubstratetransfertechnology AT lubin highbreakdown1500valganganhemtsbysubstratetransfertechnology AT palaciostomas highbreakdown1500valganganhemtsbysubstratetransfertechnology |