Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics
Carbon-based nanomaterials such as metallic single-walled carbon nanotubes, multiwalled carbon nanotubes (MWCNTs), and graphene have been considered as some of the most promising candidates for future interconnect technology because of their high current-carrying capacity and conductivity in the nan...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/72125 https://orcid.org/0000-0003-0551-1208 |
| _version_ | 1826213556613283840 |
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| author | Chen, Xiangyu Akinwande, Deji Lee, Kyeong-Jae Close, Gael F. Yasuda, Shinichi Paul, Bipul C. Fujita, Shinobu Kong, Jing Wong, H. -S. Philip |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chen, Xiangyu Akinwande, Deji Lee, Kyeong-Jae Close, Gael F. Yasuda, Shinichi Paul, Bipul C. Fujita, Shinobu Kong, Jing Wong, H. -S. Philip |
| author_sort | Chen, Xiangyu |
| collection | MIT |
| description | Carbon-based nanomaterials such as metallic single-walled carbon nanotubes, multiwalled carbon nanotubes (MWCNTs), and graphene have been considered as some of the most promising candidates for future interconnect technology because of their high current-carrying capacity and conductivity in the nanoscale, and immunity to electromigration, which has been a great challenge for scaling down the traditional copper interconnects. Therefore, studies on the performance and optimization of carbon-based interconnects working in a realistic operational environment are needed in order to advance the technology beyond the exploratory discovery phase. In this paper, we present the first demonstration of graphene interconnects monolithically integrated with industry-standard complementary metal-oxide-semiconductor technology, as well as the first experimental results that compare the performance of high-speed on-chip graphene and MWCNT interconnects. The graphene interconnects operate up to 1.3-GHz frequency, which is a speed that is commensurate with the fastest high-speed processor chips today. A low-swing signaling technique has been applied to improve the speed of carbon interconnects up to 30%. |
| first_indexed | 2024-09-23T15:51:07Z |
| format | Article |
| id | mit-1721.1/72125 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:51:07Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/721252022-10-02T04:32:29Z Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics Chen, Xiangyu Akinwande, Deji Lee, Kyeong-Jae Close, Gael F. Yasuda, Shinichi Paul, Bipul C. Fujita, Shinobu Kong, Jing Wong, H. -S. Philip Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Kong, Jing Lee, Kyeong-Jae Kong, Jing Carbon-based nanomaterials such as metallic single-walled carbon nanotubes, multiwalled carbon nanotubes (MWCNTs), and graphene have been considered as some of the most promising candidates for future interconnect technology because of their high current-carrying capacity and conductivity in the nanoscale, and immunity to electromigration, which has been a great challenge for scaling down the traditional copper interconnects. Therefore, studies on the performance and optimization of carbon-based interconnects working in a realistic operational environment are needed in order to advance the technology beyond the exploratory discovery phase. In this paper, we present the first demonstration of graphene interconnects monolithically integrated with industry-standard complementary metal-oxide-semiconductor technology, as well as the first experimental results that compare the performance of high-speed on-chip graphene and MWCNT interconnects. The graphene interconnects operate up to 1.3-GHz frequency, which is a speed that is commensurate with the fastest high-speed processor chips today. A low-swing signaling technique has been applied to improve the speed of carbon interconnects up to 30%. 2012-08-14T18:49:04Z 2012-08-14T18:49:04Z 2010-09 2010-07 Article http://purl.org/eprint/type/JournalArticle 0018-9383 http://hdl.handle.net/1721.1/72125 Chen, Xiangyu et al. “Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed CMOS Electronics.” IEEE Transactions on Electron Devices 57.11 (2010): 3137–3143. © Copyright 2010 IEEE https://orcid.org/0000-0003-0551-1208 en_US http://dx.doi.org/10.1109/TED.2010.2069562 IEEE Transactions on Electron Devices Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Chen, Xiangyu Akinwande, Deji Lee, Kyeong-Jae Close, Gael F. Yasuda, Shinichi Paul, Bipul C. Fujita, Shinobu Kong, Jing Wong, H. -S. Philip Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics |
| title | Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics |
| title_full | Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics |
| title_fullStr | Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics |
| title_full_unstemmed | Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics |
| title_short | Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed Cmos Electronics |
| title_sort | fully integrated graphene and carbon nanotube interconnects for gigahertz high speed cmos electronics |
| url | http://hdl.handle.net/1721.1/72125 https://orcid.org/0000-0003-0551-1208 |
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