Delay Analysis of Graphene Field-Effect Transistors
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic...
Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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Online Access: | http://hdl.handle.net/1721.1/72126 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
Summary: | In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures. |
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