Delay Analysis of Graphene Field-Effect Transistors
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/72126 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1811080935761772544 |
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| author | Wang, Han Hsu, Allen Long Lee, Dong Seup Kim, Ki Kang Kong, Jing Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Wang, Han Hsu, Allen Long Lee, Dong Seup Kim, Ki Kang Kong, Jing Palacios, Tomas |
| author_sort | Wang, Han |
| collection | MIT |
| description | In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures. |
| first_indexed | 2024-09-23T11:39:12Z |
| format | Article |
| id | mit-1721.1/72126 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:39:12Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/721262022-09-27T21:00:54Z Delay Analysis of Graphene Field-Effect Transistors Wang, Han Hsu, Allen Long Lee, Dong Seup Kim, Ki Kang Kong, Jing Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Research Laboratory of Electronics Kong, Jing Wang, Han Hsu, Allen Long Lee, Dong Seup Kim, Ki Kang Kong, Jing Palacios, Tomas In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures. United States. Office of Naval Research. GATE MURI Project U.S. Army Research Laboratory Microelectronics Advanced Research Corporation (MARCO). MSD Program 2012-08-14T19:01:58Z 2012-08-14T19:01:58Z 2012-02 2011-11 Article http://purl.org/eprint/type/JournalArticle 0741-3106 http://hdl.handle.net/1721.1/72126 Wang, Han et al. “Delay Analysis of Graphene Field-Effect Transistors.” IEEE Electron Device Letters 33.3 (2012): 324–326. https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/led.2011.2180886 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) arXiv |
| spellingShingle | Wang, Han Hsu, Allen Long Lee, Dong Seup Kim, Ki Kang Kong, Jing Palacios, Tomas Delay Analysis of Graphene Field-Effect Transistors |
| title | Delay Analysis of Graphene Field-Effect Transistors |
| title_full | Delay Analysis of Graphene Field-Effect Transistors |
| title_fullStr | Delay Analysis of Graphene Field-Effect Transistors |
| title_full_unstemmed | Delay Analysis of Graphene Field-Effect Transistors |
| title_short | Delay Analysis of Graphene Field-Effect Transistors |
| title_sort | delay analysis of graphene field effect transistors |
| url | http://hdl.handle.net/1721.1/72126 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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