Delay Analysis of Graphene Field-Effect Transistors

Delay Analysis of Graphene Field-Effect Transistors

In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic...

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Bibliografische gegevens
Hoofdauteurs:	Wang, Han, Hsu, Allen Long, Lee, Dong Seup, Kim, Ki Kang, Kong, Jing, Palacios, Tomas
Andere auteurs:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Formaat:	Artikel
Taal:	en_US
Gepubliceerd in:	Institute of Electrical and Electronics Engineers (IEEE) 2012
Online toegang:	http://hdl.handle.net/1721.1/72126 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X

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