Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (g[subscript m]) with respect to the intrinsic DC g[subscript m]. To reduce this...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
|
| Online Access: | http://hdl.handle.net/1721.1/72674 https://orcid.org/0000-0002-2190-563X |