Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript bk]) of AlGaN/GaN HEMTs grown on Si (less than 600 V for 2 μm total nitride epi...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/73099 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |