Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces
We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling both the methane concentration during CVD and the substrate cooling rate...
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| Format: | Article |
| Language: | en_US |
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Springer-Verlag
2012
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| Online Access: | http://hdl.handle.net/1721.1/73492 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0003-4890-6103 |
| _version_ | 1826190788321607680 |
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| author | Reina, Alfonso Thiele, Stefan Jia, Xiaoting Bhaviripudi, Sreekar Dresselhaus, Mildred Schaefer, Juergen A. Kong, Jing |
| author2 | delete |
| author_facet | delete Reina, Alfonso Thiele, Stefan Jia, Xiaoting Bhaviripudi, Sreekar Dresselhaus, Mildred Schaefer, Juergen A. Kong, Jing |
| author_sort | Reina, Alfonso |
| collection | MIT |
| description | We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5%–11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrystalline Ni film. The number density of sites with multilayer graphene/graphite (>2 layers) is reduced as the cooling rate decreases. These films can also be transferred to other substrates and their sizes are only limited by the sizes of the Ni film and the CVD chamber. Here, we demonstrate the formation of films as large as 1 in2. These findings represent an important step towards the fabrication of large-scale high-quality graphene samples. |
| first_indexed | 2024-09-23T08:45:40Z |
| format | Article |
| id | mit-1721.1/73492 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:45:40Z |
| publishDate | 2012 |
| publisher | Springer-Verlag |
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| spelling | mit-1721.1/734922022-09-30T11:02:22Z Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces Reina, Alfonso Thiele, Stefan Jia, Xiaoting Bhaviripudi, Sreekar Dresselhaus, Mildred Schaefer, Juergen A. Kong, Jing delete Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Physics Massachusetts Institute of Technology. Research Laboratory of Electronics Reina, Alfonso Jia, Xiaoting Bhaviripudi, Sreekar Dresselhaus, Mildred Kong, Jing We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5%–11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrystalline Ni film. The number density of sites with multilayer graphene/graphite (>2 layers) is reduced as the cooling rate decreases. These films can also be transferred to other substrates and their sizes are only limited by the sizes of the Ni film and the CVD chamber. Here, we demonstrate the formation of films as large as 1 in2. These findings represent an important step towards the fabrication of large-scale high-quality graphene samples. National Science Foundation (U.S.) (CTS 05-06830) National Science Foundation (U.S.) (DMR07-04197) 2012-10-01T13:39:05Z 2012-10-01T13:39:05Z 2009 2009-05 Article http://purl.org/eprint/type/JournalArticle 1998-0124 1998-0000 http://hdl.handle.net/1721.1/73492 Reina, Alfonso et al. “Growth of Large-area Single- and Bi-layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces.” Nano Research 2.6 (2010): 509–516. https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0003-4890-6103 en_US http://dx.doi.org/10.1007/s12274-009-9059-y Nano Research Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf Springer-Verlag arXiv |
| spellingShingle | Reina, Alfonso Thiele, Stefan Jia, Xiaoting Bhaviripudi, Sreekar Dresselhaus, Mildred Schaefer, Juergen A. Kong, Jing Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces |
| title | Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces |
| title_full | Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces |
| title_fullStr | Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces |
| title_full_unstemmed | Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces |
| title_short | Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces |
| title_sort | growth of large area single and bi layer graphene by controlled carbon precipitation on polycrystalline ni surfaces |
| url | http://hdl.handle.net/1721.1/73492 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0003-4890-6103 |
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