High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN templat...
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Format: | Article |
Language: | English |
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2004
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Online Access: | http://hdl.handle.net/1721.1/7366 |
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author | Wang, Yadong Zang, Keyan Chua, Soo-Jin Fonstad, Clifton G. Jr. |
author_facet | Wang, Yadong Zang, Keyan Chua, Soo-Jin Fonstad, Clifton G. Jr. |
author_sort | Wang, Yadong |
collection | MIT |
description | High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode. |
first_indexed | 2024-09-23T14:40:43Z |
format | Article |
id | mit-1721.1/7366 |
institution | Massachusetts Institute of Technology |
language | English |
last_indexed | 2024-09-23T14:40:43Z |
publishDate | 2004 |
record_format | dspace |
spelling | mit-1721.1/73662019-04-12T07:20:56Z High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth Wang, Yadong Zang, Keyan Chua, Soo-Jin Fonstad, Clifton G. Jr. gallium nitride silicon dioxide nanodot arrays template-assisted selective growth High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode. Singapore-MIT Alliance (SMA) 2004-12-10T13:46:06Z 2004-12-10T13:46:06Z 2005-01 Article http://hdl.handle.net/1721.1/7366 en Advanced Materials for Micro- and Nano-Systems (AMMNS); 547228 bytes application/pdf application/pdf |
spellingShingle | gallium nitride silicon dioxide nanodot arrays template-assisted selective growth Wang, Yadong Zang, Keyan Chua, Soo-Jin Fonstad, Clifton G. Jr. High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth |
title | High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth |
title_full | High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth |
title_fullStr | High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth |
title_full_unstemmed | High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth |
title_short | High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth |
title_sort | high density single crystalline gan nanodot arrays fabricated using template assisted selective growth |
topic | gallium nitride silicon dioxide nanodot arrays template-assisted selective growth |
url | http://hdl.handle.net/1721.1/7366 |
work_keys_str_mv | AT wangyadong highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth AT zangkeyan highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth AT chuasoojin highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth AT fonstadcliftongjr highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth |