High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN templat...

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Main Authors: Wang, Yadong, Zang, Keyan, Chua, Soo-Jin, Fonstad, Clifton G. Jr.
Format: Article
Language:English
Published: 2004
Subjects:
Online Access:http://hdl.handle.net/1721.1/7366
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author Wang, Yadong
Zang, Keyan
Chua, Soo-Jin
Fonstad, Clifton G. Jr.
author_facet Wang, Yadong
Zang, Keyan
Chua, Soo-Jin
Fonstad, Clifton G. Jr.
author_sort Wang, Yadong
collection MIT
description High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.
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spelling mit-1721.1/73662019-04-12T07:20:56Z High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth Wang, Yadong Zang, Keyan Chua, Soo-Jin Fonstad, Clifton G. Jr. gallium nitride silicon dioxide nanodot arrays template-assisted selective growth High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode. Singapore-MIT Alliance (SMA) 2004-12-10T13:46:06Z 2004-12-10T13:46:06Z 2005-01 Article http://hdl.handle.net/1721.1/7366 en Advanced Materials for Micro- and Nano-Systems (AMMNS); 547228 bytes application/pdf application/pdf
spellingShingle gallium nitride
silicon dioxide
nanodot arrays
template-assisted selective growth
Wang, Yadong
Zang, Keyan
Chua, Soo-Jin
Fonstad, Clifton G. Jr.
High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
title High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
title_full High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
title_fullStr High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
title_full_unstemmed High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
title_short High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
title_sort high density single crystalline gan nanodot arrays fabricated using template assisted selective growth
topic gallium nitride
silicon dioxide
nanodot arrays
template-assisted selective growth
url http://hdl.handle.net/1721.1/7366
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AT zangkeyan highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth
AT chuasoojin highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth
AT fonstadcliftongjr highdensitysinglecrystallinegannanodotarraysfabricatedusingtemplateassistedselectivegrowth