High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN templat...
| Hlavní autoři: | , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
2004
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| Témata: | |
| On-line přístup: | http://hdl.handle.net/1721.1/7366 |