Oblique Angle Deposition of Germanium Film on Silicon Substrate
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isol...
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Format: | Article |
Language: | English |
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2004
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Online Access: | http://hdl.handle.net/1721.1/7370 |
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author | Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Fitzgerald, Eugene A. |
author_facet | Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Fitzgerald, Eugene A. |
author_sort | Chew, Han Guan |
collection | MIT |
description | The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy. |
first_indexed | 2024-09-23T09:27:50Z |
format | Article |
id | mit-1721.1/7370 |
institution | Massachusetts Institute of Technology |
language | English |
last_indexed | 2024-09-23T09:27:50Z |
publishDate | 2004 |
record_format | dspace |
spelling | mit-1721.1/73702019-04-12T08:40:21Z Oblique Angle Deposition of Germanium Film on Silicon Substrate Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Fitzgerald, Eugene A. Oblique angle deposition Germanium nanowires The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy. Singapore-MIT Alliance (SMA) 2004-12-10T14:08:26Z 2004-12-10T14:08:26Z 2005-01 Article http://hdl.handle.net/1721.1/7370 en Advanced Materials for Micro- and Nano-Systems (AMMNS); 1682300 bytes application/pdf application/pdf |
spellingShingle | Oblique angle deposition Germanium nanowires Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Fitzgerald, Eugene A. Oblique Angle Deposition of Germanium Film on Silicon Substrate |
title | Oblique Angle Deposition of Germanium Film on Silicon Substrate |
title_full | Oblique Angle Deposition of Germanium Film on Silicon Substrate |
title_fullStr | Oblique Angle Deposition of Germanium Film on Silicon Substrate |
title_full_unstemmed | Oblique Angle Deposition of Germanium Film on Silicon Substrate |
title_short | Oblique Angle Deposition of Germanium Film on Silicon Substrate |
title_sort | oblique angle deposition of germanium film on silicon substrate |
topic | Oblique angle deposition Germanium nanowires |
url | http://hdl.handle.net/1721.1/7370 |
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