Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most pro...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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2004
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/7371 |
| _version_ | 1811080115171360768 |
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| author | Yu, Hongpeng Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. |
| author_facet | Yu, Hongpeng Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. |
| author_sort | Yu, Hongpeng |
| collection | MIT |
| description | Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁âxGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented. |
| first_indexed | 2024-09-23T11:26:04Z |
| format | Article |
| id | mit-1721.1/7371 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:26:04Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | mit-1721.1/73712019-04-12T08:41:32Z Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate Poly-Si1-xGex Film Growth for Ni Germanosilicided Metal Gate Yu, Hongpeng Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. complementary metal oxide semiconductor nickel poly-SiGe poly-silicon germanium silica Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁âxGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented. Singapore-MIT Alliance (SMA) 2004-12-10T14:17:18Z 2004-12-10T14:17:18Z 2005-01 Article http://hdl.handle.net/1721.1/7371 en Advanced Materials for Micro- and Nano-Systems (AMMNS); 13404 bytes application/pdf application/pdf |
| spellingShingle | complementary metal oxide semiconductor nickel poly-SiGe poly-silicon germanium silica Yu, Hongpeng Pey, Kin Leong Choi, Wee Kiong Fitzgerald, Eugene A. Antoniadis, Dimitri A. Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate |
| title | Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate |
| title_full | Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate |
| title_fullStr | Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate |
| title_full_unstemmed | Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate |
| title_short | Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate |
| title_sort | poly si₁axgex film growth for ni germanosilicided metal gate |
| topic | complementary metal oxide semiconductor nickel poly-SiGe poly-silicon germanium silica |
| url | http://hdl.handle.net/1721.1/7371 |
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