Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most pro...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2004
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/7371 |