RF Power Degradation of GaN High Electron Mobility Transistors
We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation betwee...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/74001 |
| _version_ | 1826190148121919488 |
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| author | Joh, Jungwoo del Alamo, Jesus A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Joh, Jungwoo del Alamo, Jesus A. |
| author_sort | Joh, Jungwoo |
| collection | MIT |
| description | We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation between selected RF and DC figures of merit. However, compared with DC stress, RF stress at the same bias point is found to be more severe and to introduce new degradation modes. At high power level, RF stress induces a prominent trapping-related increase in the source resistance most likely as a result of the creation of new traps. This is in contrast with drain degradation that often occurs under similar DC conditions. Our findings cast a doubt over the ability of DC life test in evaluating reliability under RF power conditions. |
| first_indexed | 2024-09-23T08:35:46Z |
| format | Article |
| id | mit-1721.1/74001 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:35:46Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/740012022-09-23T13:08:26Z RF Power Degradation of GaN High Electron Mobility Transistors Joh, Jungwoo del Alamo, Jesus A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Joh, Jungwoo del Alamo, Jesus A. We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation between selected RF and DC figures of merit. However, compared with DC stress, RF stress at the same bias point is found to be more severe and to introduce new degradation modes. At high power level, RF stress induces a prominent trapping-related increase in the source resistance most likely as a result of the creation of new traps. This is in contrast with drain degradation that often occurs under similar DC conditions. Our findings cast a doubt over the ability of DC life test in evaluating reliability under RF power conditions. U.S. Army Research Laboratory (DARPA-WBGS program) United States. Office of Naval Research (DRIFT-MURI program) 2012-10-16T12:53:59Z 2012-10-16T12:53:59Z 2011-01 2010-12 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-7419-6 978-1-4424-7418-5 0163-1918 http://hdl.handle.net/1721.1/74001 Joh, Jungwoo, and Jesus A. del Alamo. “RF power degradation of GaN High Electron Mobility Transistors.” IEEE, 2010. 20.2.1-20.2.4. © Copyright 2010 IEEE en_US http://dx.doi.org/10.1109/IEDM.2010.5703397 IEEE International Electron Devices Meeting (IEDM), 2010 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Joh, Jungwoo del Alamo, Jesus A. RF Power Degradation of GaN High Electron Mobility Transistors |
| title | RF Power Degradation of GaN High Electron Mobility Transistors |
| title_full | RF Power Degradation of GaN High Electron Mobility Transistors |
| title_fullStr | RF Power Degradation of GaN High Electron Mobility Transistors |
| title_full_unstemmed | RF Power Degradation of GaN High Electron Mobility Transistors |
| title_short | RF Power Degradation of GaN High Electron Mobility Transistors |
| title_sort | rf power degradation of gan high electron mobility transistors |
| url | http://hdl.handle.net/1721.1/74001 |
| work_keys_str_mv | AT johjungwoo rfpowerdegradationofganhighelectronmobilitytransistors AT delalamojesusa rfpowerdegradationofganhighelectronmobilitytransistors |