RF Power Degradation of GaN High Electron Mobility Transistors

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation betwee...

ver descrição completa

Detalhes bibliográficos
Principais autores: Joh, Jungwoo, del Alamo, Jesus A.
Outros Autores: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Formato: Artigo
Idioma:en_US
Publicado em: Institute of Electrical and Electronics Engineers (IEEE) 2012
Acesso em linha:http://hdl.handle.net/1721.1/74001