RF Power Degradation of GaN High Electron Mobility Transistors

RF Power Degradation of GaN High Electron Mobility Transistors

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation betwee...

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Bibliographic Details
Main Authors:	Joh, Jungwoo, del Alamo, Jesus A.
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	en_US
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2012
Online Access:	http://hdl.handle.net/1721.1/74001

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